^e.mi-(2ofiducial '^product*, [inc.. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 2SB507 description ? collector-emitter breakdown voltage- : v(br)ceo= -60v(min) ? low collector-emitter saturation voltage- :vce(sat)=-1.0v(max)@lc=-2.0a ? complement to type 2sd313 applications ? designed for the output stage of 15w to 25waf power amplifier. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ tg=25r junction temperature storage temperature range value -60 -60 -5.0 -3.0 -6.0 30 -55-150 -55-150 unit v v v a a w r 'c thermal characteristics symbol r(h j-c parameter thermal resistance, junction to case max 4.16 unit 'cm/ * ?-! fih: 1 base : . , 2 collector ' '. 3 bitter * 3 to-220c package ?ti :h a ? jl "* b 1 h -.- y h x-f ikflj ..^ 4 ^v\ t 1 -h f c~t a it v oh j dtiv a b c d f g h j k l 0 r s u tf -*1 mm win 15.50 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10,20 4.50 0.90 3.70 5.18 2.90 0,60 13.40 1.30 2.90 2.70 1.35 6.65 8.86 *s ?r*'j ?k n.i semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information i'urnished hy nj semi-conduetors is believed to he hoth accurate and reliahle at the time or'going lo press. however, nj semi-conduetors assumes no responsibility for any errors or omissions discovered in its use. " n.i semi-conduetors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SB507 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo vce(sat) vee(on) icbo iceo iebo hpe-1* hfe-2 fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current-gain?bandwidth product conditions lc=-10ma;lb= 0 lc= -2a; ib= -0.2a lc= -1a; vce= -2v vcb= -20v; ie= 0 vce= -60v; ib= 0 veb= -4v ; lc= 0 lc= -1a; vce= -2v ic=-0.1a;vce=-2v ig= -0.5a; vce= -5v;ftest= 1.0mhz min -60 40 40 5.0 typ. max -1.0 -1.5 -100 -5 -1 320 unit v v v ma ma ma mhz *pulse test :pulse width=300us,cuty cycle?s2.0% ? hpe-1 classifications c 40-80 d 60-120 e 100-200 f 160-320
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